Publications on InSb Quantum Wells and Related Materials
(with S.Q. Murphy's , R.E. Doezema's, and M.B. Johnson's groups, and numerous external collaborators)
(with S.Q. Murphy's , R.E. Doezema's, and M.B. Johnson's groups, and numerous external collaborators)
- “Interband and intraband relaxation dynamics in InSb based quantum wells,” M. Bhowmick, G.A. Khodaparast, T.D. Mishima, M.B. Santos, D. Saha, G. Sanders, and C. J. Stanton, Journal of Applied Physics 120, 235702 (2016).
- “Interband magneto-spectroscopy in InSb square and parabolic quantum wells,” T. Kasturiarachchi, D. Saha, X. Pan, G.D. Sanders, M. Edirisooriya, T.D. Mishima, R.E. Doezema, C.J. Stanton, and M.B. Santos, Journal of Applied Physics 117, 213914 (2015).
- “High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-On-Insulator substrates,” M.C. Debnath, T. D. Mishima, M. B. Santos, L.C. Phinney, T.D. Golding, and K. Hossain, Journal of Vacuum Science and Technology B 32 , 02C116 (2014).
- “Effect of substrate miscut on the electron mobility in InSb(001) structures on Ge and Ge-On-Insulator substrates,” M.C. Debnath, T.D. Mishima, M.B. Santos, and K. Hossain, Chinese Science Bulletin 59, 369 (2014).
- “Gate depletion of an InSb two-dimensional electron gas,” M.M. Uddin, H.W. Liu, K.F. Yang, K. Nagase, K. Sekine, C.K. Gaspe, T. D. Mishima, M.B. Santos, and Y. Hirayama, Applied Physics Letters 103, 123502 (2013).
- “Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates,” M.C. Debnath, T.D. Mishima, M.B. Santos, K. Hossain, and O.W. Holland, Journal of Applied Physics 111, 073525 (2012).
- “Regression analysis for transport electron scattering caused by structural defects in InSb quantum wells: Application of Matthiessen's formula,” T.D. Mishima and M.B. Santos, Japanese Journal of Applied Physics 51, 06FE07 (2012).
- “Characterization of InSb quantum wells with atomic layer deposited gate dielectrics,” M. M. Uddin, H.W. Liu, K.F. Yang, K. Nagase, T.D. Mishima, M.B. Santos, and Y. Hirayama, Applied Physics Letters 101, 233503 (2012).
- “Impact of structural defects upon electron mobility in InSb quantum wells,” T.D. Mishima and M.B. Santos, Journal of Applied Physics 109, 073707 (2011).
- “Intersubband Absorption by Electrons in InSb Quantum Wells with an In-Plane Magnetic Field,” M.B. Santos, S.D. Lowe, T.D. Mishima, R.E. Doezema, L.C. Tung, and Y-J. Wang, AIP Conference Proceedings 1399, 133 (2011).
- “Effect of Strain and Confinement on the Effective Mass of Holes in InSb Quantum Wells,” C.K. Gaspe, M. Edirisooriya, T.D. Mishima, P.A.R. Dilhani Jayathilaka, R.E. Doezema, S.Q. Murphy, M.B. Santos, L.C. Tung and Y-J. Wang, J. Vac. Sci. Technol. B 29, 03C110 (2011).
- “Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature,” K. F. Yang, H. W. Liu, K. Nagase, T. D. Mishima, M. B. Santos, and Y. Hirayama, Applied Physics Letters 98, 142109 (2011).
- “Nonlinear Magnetic Field Dependence of Spin Polarization in Two-Dimensional Electron Systems,” K.F. Yang, H.W. Liu, T.D. Mishima, M.B. Santos, K. Nagase, Y. Hirayama, New Journal of Physics 13, 083010 (2011).
- “Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Journal of Applied Physics 110, 093705 (2011).
- “Resistively Detected Nuclear Spin Polarization in Single Narrow-Gap Quantum Wells,” H.W. Liu, K.F. Yang, T.D. Mishima, M.B. Santos, and Y. Hirayama, AIP Conference Proceedings 1399, 625 (2011).
- “Nonlinear Spin Polarization Dependence of Spin Susceptibility in Interacting Two-Dimensional Electron Systems,” K.F. Yang, H.W. Liu, K. Nagase, K. Amakata, T.D. Mishima, M.B. Santos, and Y. Hirayama, AIP Conference Proceedings 1399, 677 (2011).
- “Probing Spin-Relaxation Anisotropy in 1D InSb Wires by Weak Anti-Localization,” P.A.R.D. Jayathilaka, S. Cairns, J. Keay, S.Q. Murphy, C.K. Gaspe, T.D. Mishima, and M.B. Santos, AIP Conference Proceedings 1416, 95 (2011).
- “Magneto-Optical Properties of InSb Semiconductor Heterostructures,” X. Pan, D. Saha, G.D. Sanders, C.J. Stanton, T. Kasturiarachchi, M. Edirisooriya, T.D. Mishima, R.E. Doezema, and M.B. Santos, AIP Conference Proceedings 1416, 113 (2011).
- “The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates,” M.C. Debnath, T.D. Mishima, M.B. Santos, K. Hossain, and O. W. Holland, AIP Conference Proceedings 1416, 146 (2011).
- “Electron Scattering in InSb Quantum Wells due to Micro-twin Defects,” T.D. Mishima and M.B. Santos, AIP Conference Proceedings 1416, 165 (2011).
- “Dependence of the Spin Coherence Length on Wire Width for Quasi-1-Dimensional InSb and InAs Wires and Bi Wire Surface States,” M. Rudolph, J.J. Heremans, R.L. Kallaher, N. Goel, S.J. Chung, M.B. Santos, W. Van Roy, and G. Borghs, AIP Conference Proceedings 1416, 171 (2011).
- “Carrier Dynamics in Parabolic InSb Based Multi Quantum Wells,” M. Bhowmick, T. Merritt, K. Nontapot, G.A. Khodaparast, T.D. Mishima, and M.B. Santos, AIP Conference Proceedings 1416, 192 (2011).
- “Dynamic Nuclear Polarization and Nuclear Magnetic Resonance in the Simplest Pseudospin Quantum Hall Ferromagnet,” H. W. Liu, K. F. Yang, T. D. Mishima, M. B. Santos, Y. Hirayama, Physical Review B 82 (Rapid Comm.), 241304 (2010). Editor’s Choice
- “Dislocation-filtering AlInSb buffer layers for InSb quantum wells—Analysis by high-tilt bright-field and dark-field TEM,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Physica E 42, 2777 (2010).
- “Spin and phase coherence in quasi-1D InSb wires under strong spin–orbit interaction,” R.L. Kallaher, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, Physica E 42, 971 (2010).
- “Cyclotron resonance in p-doped InSb quantum wells,” M.B. Santos, M. Edirisooriya, T.D. Mishima, C.K. Gaspe, J. Coker, R.E. Doezema, X. Pan, G.D. Sanders, C.J. Stanton, L.C. Tung, and Y-J. Wang, Physics Procedia 3, 1201 (2010).
- “Micro-twin defects in InSb/AlInSb layers grown on (001) GaAs- Application of the < 116> directional analysis,” T.D. Mishima and M.B. Santos, Physics Procedia 3, 1373 (2010).
- “Oscillatory quantum interference effects in narrow-gap semiconductor heterostructures,” R.B. Lillianfeld, R.L. Kallaher, J.J. Heremans, H. Chen, N. Goel, S.J. Chung, M.B. Santos, W. Van Roy, and G. Borghs, Physics Procedia 3, 1231 (2010).
- “Probe of intersubband relaxations of photo-excited carriers and spins in InSb-based quantum wells,” M. Bhowmick, R.N. Kini, K. Nontapot, G.A. Khodaparast, N. Goel, S.J. Chung, T.D. Mishima, and M.B. Santos, Physics Procedia 3, 1161 (2010).
- “Spin-orbit interaction determined by antilocalization in an InSb quantum well,” R.L. Kallaher, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, Physical Review B 81, 075303 (2010).
- “Spin and phase coherence lengths in n-InSb quasi-one-dimensional wires,” R.L. Kallaher, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, Physical Review B 81, 035335 (2010).
- “Probe of coherent and quantum states in narrow-gap semiconductors in the presence of strong spin-orbit coupling,” Giti A. Khodaparast, Mithun Bhowmick, Matthew Frazier, Rajeev N. Kini, Kanokwan Nontapot, Tetsuya D. Mishima, Michael B. Santos, and Bruce W. Wessels, Proc. SPIE 7608, 76080O (2010).
- Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy,” M.C. Debnath, T.D. Mishima, M.B. Santos, K. Hossain, and O.W. Holland, Journal of Vacuum Science and Technology B 27, 2453 (2009).
- “Photoinduced spin-polarized current in InSb-based structures,” M. Frazier, J.G. Cates, J.A. Waugh, J.J. Heremans, M.B. Santos, X. Liu, and G.A. Khodaparast, Journal of Applied Physics 106, 103513 (2009).
- “Comprehensive doping and temperature studies of spin relaxation in InSb,” Dorel Guzun, Eric Decuir Jr., Vasyl Kunets, Yu Mazur, Gregory J. Salamo, P.A.R. Dilhani Jayathilaka, Sheena Murphy, Tetsuya Mishima, and Michael Santos, Applied Physics Letters 95, 241903 (2009).
- “InSb Quantum-Well Structures for Electronic Device Applications,” M. Edirisooriya, T.D. Mishima, C.K. Gaspe, K. Bottoms, R.J. Hauenstein, and M.B. Santos, Journal of Crystal Growth 311, 1972 (2009).
- “InSb quantum well based micro-Hall devices: potential for pT-detectivity,” Vas. P. Kunets, S. Easwaran, W. T. Black, D. Guzun, Yu. I. Mazur, and G. J. Salamo, N. Goel, T. D. Mishima, and M. B. Santos, IEEE Transactions on Electron Devices 56, 683 (2009).
- “Micro-twin induced structural misalignment in InSb quantum wells,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Phys. Stat. Sol. (c) 5, 2775 (2008).
- “Magnetoexcitons in Strained InSb Quantum Wells,” W. Gempel, X. Pan, T. Kasturiarachchi, G.D. Sanders, M. Edirisooriya, T.D. Mishima, R.E. Doezema, C.J. Stanton, and M.B. Santos, Springer Proceedings in Physics 119, 213 (2008).
- “Measurement of the Dresselhaus and Rashba spin-orbit coupling via weak anti-localization in InSb quantum wells,” A.R. Dedigama, D. Jayathilaka, S.H. Gunawardana, S.Q. Murphy, M. Edirisooriya, N. Goel, T.D. Mishima and M.B. Santos, Springer Proceedings in Physics 119, 35 (2008).
- “Control and Probe of Carrier and Spin Relaxations in InSb Based Structures,” G.A. Khodaparast, R.N. Kini, K. Nontapot, M. Frazier, E.C. Wade, J.J. Heremans, S.J. Chung, N. Goel, M.B. Santos, T. Wojtowicz, X. Liu, and J.K Furdyna, Springer Proceedings in Physics 119, 15 (2008).
- “Reduction of micro-twin defects for high-electron-mobility InSb quantum wells,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Applied Physics Letters 91, 062106 (2007).
- “Effect of Al composition on filtering of threading dislocations by AlxIn1-xSb/AlyIn1-ySb heterostructures grown on GaAs (001),” M. Edirisooriya, T.D. Mishima, and M.B. Santos, Journal of Vacuum Science and Technology B25, 1063 (2007).
- “Spin-Dependent Transverse Magnetic Focusing in InSb- and InAs-based Heterostructures,” J.J. Heremans, Hong Chen, M.B. Santos, N. Goel, W. Van Roy, and G. Borghs, AIP Conference Proceedings 893, 1287 (2007).
- “Exciton Determination of Strain Parameters in InSb/AlxIn1-xSb Quantum Wells”, T. Kasturiarachchi, F. Brown, N. Dai, G.A. Khodaparast, R.E. Doezema, N. Goel, S.J. Chung and M.B. Santos, Journal of Vacuum Science and Technology B24, 2429 (2006).
- “Structural Defects in InSb Quantum Wells Grown on GaAs (001) Substrates via Al0.09In0.91Sb/GaSb-AlSb Strained Layer Superlattice/AlSb/GaSb Buffer Layers,” T.D. Mishima, M. Edirisooriya and M.B. Santos, Materials Research Society Symposium Proceedings 891, 0891-EE01-11 (2006).
- “Current focusing in InSb heterostructures,” A.R. Dedigama, D. Deen, S.Q. Murphy, N. Goel, J. Keay, M.B. Santos, K. Suzuki, S. Miyashita, and Y. Hirayama, Physica E 34, 647 (2006).
- “Mesoscopic spin-dependent reflection experiments on InSb- and InAs-based heterostructures,” H. Chen, J. A. Peters, Yue Pan, J. J. Heremans, N. Goel, S. J. Chung, M. B. Santos, W. Van Roy and G. Borghs, Physica E 34, 374 (2006).
- “Localization and antilocalization in InSb and InAs antidot lattices,” J. A. Peters, H. Chen, Yue Pan, Yafei Guan, J. J. Heremans, N. Goel, S. J. Chung, M. B. Santos, W. Van Roy and G. Borghs, Physica E 34, 363 (2006).
- “Photoluminescence study of InSb/AlxIn1-xSb quantum wells,” X.H. Zhang, N. Dai, F.H. Zhao, Z.S. Shi, R.E. Doezema, N. Goel, S.J. Chung, and M.B. Santos, Applied Physics Letters 89, 021907 (2006).
- “Dislocation filtering by AlxIn1-xSb/ AlyIn1-ySb interfaces for InSb-based devices grown on GaAs(001) substrates,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Applied Physics Letters 88, 191908 (2006).
- “Determination of deformation potentials in strained InSb quantum wells,” T. Kasturiarachchi, F. Brown, N. Dai, G.A. Khodaparast, R.E. Doezema, S.J. Chung, and M.B. Santos, Applied Physics Letters 88, 171901 (2006).
- “Dislocation filtering at the interfaces between AlxIn1-xSb and AlyIn1-ySb layers,” T.D. Mishima, M. Edirisooriya, and M.B. Santos, Physica B 376-377, 591 (2006).
- “Spin-spin subband Landau-level coupling in InSb quantum wells,” R.C. Meyer, X.H. Zhang, T. Kasturiarachchi, N. Goel, R.E. Doezema, M.B. Santos, and Y.J. Wang, Narrow Gap Semiconductors 2005, edited by Kono & Léotin, IOP Conference Series 187, (Taylor & Francis, 2005), 555.
- “Time resolved studies of magnetic and non-magnetic narrow-gap semiconductors,” G.A. Khodaparast, K. Nontapot, A. Gifford, S.J. Chung, N. Goel, M.B. Santos, T. Wojtowicz, X. Liu, and J.K. Furdyna, Narrow Gap Semiconductors 2005, edited by Kono & Léotin, IOP Conference Series 187, (Taylor & Francis, 2005), 504.
- “Mesoscopic spin-dependent ballistic transport in InSb- and InAs-based heterostructures,” H. Chen, J.A. Peters, Y. Pan, Y. Guan, J.J. Heremans, N. Goel, S.J. Chung, M.B. Santos, W.V. Roy, and G. Borghs, Narrow Gap Semiconductors 2005, edited by Kono & Léotin, IOP Conference Series 187, (Taylor & Francis, 2005), 455.
- “Molecular beam epitaxy and electronic properties of InSb heterostructures,” N. Goel, T.D. Mishima, J.C. Keay, M.B. Johnson, and M.B. Santos, Recent Res. Devl. Crystal Growth 4, 381 (2005).
- “Highly sensitive micro-Hall devices based on Al0.12In0.88Sb/InSb heterostructures,” Vas. P. Kunets, W.T. Black, Yu. I. Mazur, D. Guzun, G.J. Salamo, N. Goel, T.D. Mishima, D.A. Deen, S.Q. Murphy, and M.B. Santos, Journal of Applied Physics, 98, 014506 (2005).
- “Effect of microtwin defects on InSb quantum wells,” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Journal of Vacuum Science and Technology B23, 1171 (2005).
- “Spin polarized and ballistic transport in InSb/InAlSb heterostructures,” H. Chen, J.A. Peters, J.J. Heremans, N. Goel, S.J. Chung, and M.B. Santos, AIP Conference Proceedings 772, 1394 (2005).
- “Quantum Hall ferromagnetism in InSb heterostructures,” J.C. Chokomakoua, N. Goel, S.J. Chung, M.B. Santos, M.B. Johnson, and S.Q. Murphy, AIP Conference Proceedings 772, 533 (2005).
- “Spin-flip subband-Landau-level coupling in InSb heterostructures,” X.H. Zhang, R.C. Meyer, T. Kasturiarachchi, N. Goel, R.E. Doezema, S.J. Chung, M.B. Santos, and Y.J. Wang, AIP Conference Proceedings 772, 405 (2005).
- “Ballistic transport in InSb mesoscopic structures,” N. Goel, J. Graham, J.C. Keay, K. Suzuki, S. Miyashita, M.B. Santos, Y. Hirayama, Physica E26, 455 (2005).
- “Spin-Polarized Reflection of Electrons in a Two-Dimensional Electron System,” Hong Chen, J.J. Heremans, J.A. Peters, J.P. Dulka, A.O. Govorov, N. Goel, S.J. Chung, and M.B. Santos, Applied Physics Letters 86, 032113 (2005).
- “Spectroscopy of Rashba spin splitting in InSb quantum wells,” G.A. Khodaparast, R.E. Doezema, S.J. Chung, K.J. Goldammer, and M.B. Santos, Physical Review B70, 155322 (2004).
- “Effect of buffer layer on InSb quantum wells grown on GaAs (001) substrates,” T.D. Mishima and M.B. Santos, Journal of Vacuum Science and Technology B22, 1472 (2004).
- “Ising quantum Hall ferromagnetism in InSb-based two-dimensional electronic systems,” J.C. Chokomakoua, N. Goel, S.J. Chung, M.B. Santos, J.L. Hicks, M.B. Johnson and S.Q. Murphy, Physical Review B69, 235315 (2004).
- “Ballistic transport in InSb/AlInSb antidot lattices,” Hong Chen, J.J. Heremans, J.A. Peters, N. Goel, S.J. Chung, and M.B. Santos, Applied Physics Letters 84, 5380 (2004).
- “Structural defects in InSb/AlxIn1-xSb quantum wells grown on GaAs (001),” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Physica E21, 770 (2004).
- “Effect of temperature on ballistic transport in InSb quantum wells,” N. Goel, K. Suzuki, S. Miyashita, S.J. Chung, M.B. Santos, and Y. Hirayama, Physica E21, 761 (2004).
- “Effect of structural defects on InSb/AlxIn1-xSb quantum wells grown on GaAs (001),” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Physica E20, 260 (2004).
- “Ballistic Transport in InSb Quantum Wells at High Temperature,” N. Goel, K. Suzuki, S. Miyashita, S.J. Chung, M.B. Santos, and Y. Hirayama, Physica E20, 251 (2004).
- “Spin Effects in InSb Quantum Wells,” G.A. Khodaparast, R.C. Meyer, X.H. Zhang, T. Kasturiarachchi, R. E. Doezema, S.J. Chung, N. Goel, and M. B. Santos, and Y.J. Wang, Physica E20, 386 (2004).
- “Application of Terrahertz Quantum Cascade Lasers to Semiconductor Cyclotron Resonance,” D.C. Larrabee, G.A. Khodaparast, F.K. Tittel, J. Kono, M. Rochat, L. Ajili, H. Willenberg, J. Faist, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, S.J. Chung, and M.B. Santos, Optics Letters 29, 122 (2004).
- “Anisotropic Structural and Electronic Properties of InSb/AlxIn1-xSb Quantum Wells Grown on GaAs (001) Substrates,” T.D. Mishima, J.C. Keay, N. Goel, M.A. Ball, S.J. Chung, M.B. Johnson, and M.B. Santos, Journal of Crystal Growth 251, 551 (2003).
- “Relaxation of quasi-two-dimensional electrons in a quantizing magnetic field probed by time-resolved cyclotron resonance,” G.A. Khodaparast, D.C. Larrabee, J. Kono, S. King, S.J. Chung, and M.B. Santos, Physical Review B67, 35307 (2003).
- “Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording,” S.A. Solin, D.R. Hines, A.C.H. Rowe, J.S. Tsai, Yu. A. Pashkin, S.J. Chung, N. Goel, and M.B. Santos, Applied Physics Letters 80, 4012 (2002).
- “Mobility anisotropy in InSb/AlInSb single quantum wells,” M.A. Ball, J.C. Keay, S.J. Chung, M.B. Santos, and M.B. Johnson, Applied Physics Letters 80, 2138 (2002).
- “Room Temperature Extraordinary Magnetoresistance of Non-Magnetic Narrow-Gap Semiconductor/Metal Composites: Application to Read-Head Sensors for Ultra High Density Magnetic Recording,” S.A. Solin, D.R. Hines, J.S. Tsai, Yu. A. Pashkin, S.J. Chung, N. Goel and M.B. Santos, IEEE Transactions on Magnetics 38, 89 (2002).
- “Temperature dependence of exciton linewidths in InSb quantum wells,” N. Dai, F. Brown, R.E. Doezema, S.J. Chung, and M.B. Santos, Physical Review B63, 115321 (2001).
- “Spin resonance probe of zero-field spin splitting in InSb quantum wells,” G.A. Khodaparast, R.E. Doezema, S.J. Chung, K.J. Goldammer, and M.B. Santos, Proc. NGS 10, IPAP Conf. Series 2, 245 (2001).
- “Excitons in InSb quantum wells: A multi-use tool,” N. Dai, F. Brown, G.A. Khodaparast, R.E. Doezema, and M.B. Santos in 4th International Conference on Thin Film Physics and Applications, Proceedings of SPIE 4086, 38 (2000).
- “Band Offset Determination in the Strained-Layer InSb/AlxIn1-xSb System,” N. Dai, G.A. Khodaparast, F. Brown, R.E. Doezema, S.J. Chung, and M.B. Santos, Applied Physics Letters 76, 3905 (2000).
- “Improving the Surface Morphology of InSb Quantum-Well Structures on GaAs Substrates,” S.J. Chung, M.A. Ball, S.C. Lindstrom, M.B. Johnson, and M.B. Santos, Journal of Vacuum Science and Technology B18, 1583 (2000).
- “Electronic Characterization of InSb Quantum Wells,” S. J. Chung, N. Dai, G.A. Khodaparast, J. Hicks, K.J. Goldammer, F. Brown, W. K. Liu, R. E. Doezema, S. Q. Murphy, and M. B. Santos, Physica E7, 809 (2000).
- “Studies of the Integer Quantum Hall to Quantum Hall Insulator Transition in InSb Based 2DESs,” S.Q. Murphy, J.L. Hicks, W.K. Liu, S.J. Chung, K.J. Goldammer, and M.B. Santos, Physica E6, 293 (2000).
- "A study of factors limiting electron mobility in InSb quantum wells," S.J. Chung, K.J. Goldammer, S.L. Lindstrom, M.B. Johnson and M.B. Santos, Journal of Vacuum Science and Technology B17, 1151 (1999).
- "High-mobility electron systems in remotely-doped InSb quantum wells," K.J. Goldammer, S.J. Chung, W.K. Liu, M.B. Santos, J.L. Hicks, S. Raymond, and S.Q. Murphy, Journal of Crystal Growth 201/202, 753 (1999).
- "Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb," N. Dai, F. Brown, R.E. Doezema, S.J. Chung, K.J. Goldammer, and M.B. Santos, Applied Physics Letters 73, 3132 (1998).
- "Observation of excitonic transitions in InSb quantum wells," N. Dai, F. Brown, P. Barsic, G.A. Khodaparast, R.E. Doezema, M.B. Johnson, S.J. Chung, K.J. Goldammer, and M.B. Santos, Applied Physics Letters 73, 1101 (1998).
- “Effect of substrate temperature on Si compensation in delta-doped InSb and AlxIn1-xSb grown by molecular beam epitaxy," W.K. Liu, K.J. Goldammer, and M.B. Santos, Journal of Applied Physics 84, 205 (1998).
- "Electrical properties of InSb quantum wells remotely-doped with Si," K.J. Goldammer, W.K. Liu, G.A. Khodaparast, S.C. Lindstrom, M.B. Johnson, R.E. Doezema and M.B. Santos, Journal of Vacuum Science and Technology B16, 1367 (1998).
- "MBE growth and characterization of InSb/AlxIn1-xSb strained layer structures," M.B. Santos, W.K. Liu, R.J. Hauenstein, K.J. Goldammer, W. Ma, and M.L. O’Steen, Materials Research Society Symposium Proceedings 450, 97 (1997).
- "Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers," W.K. Liu, J. Winesett, Weiluan Ma, Xuimei Zhang, and M.B. Santos, Journal of Applied Physics 81, 1708 (1997).
- "Large mismatch heteroepitaxy of InSb on Si(111) substrates using CaF2 buffer layers," W.K. Liu, X.M. Fang, J. Winesett, Weiluan Ma, Xuemei Zhang, M.B. Santos, and P.J. McCann, Journal of Crystal Growth 175/176, 853 (1997).
- "MBE growth and characterization of AlxIn1-xSb/InSb quantum wells," W.K. Liu, Xuemei Zhang, Weiluan Ma, J. Winesett, and M.B. Santos, Journal of Vacuum Science and Technology B14, 2339 (1996).
- "Characterization of oxide desorption from InSb(001) Substrates," W.K. Liu and M.B. Santos, Journal of Vacuum Science and Technology B14, 647 (1996).
- "Cyclotron resonance and Hall effect studies of ultra-high mobility InSb films," Y. Zhang, J. Su, J.E. Furneaux, W.K. Liu, M.B. Santos, and R.E. Doezema, Narrow Gap Semiconductors 1995, edited by J.L. Reno, (IOP Publishing Ltd., 1995), 374.
- "RHEED and XPS study of oxide desorption from InSb(100) substrates", W.K. Liu and M.B. Santos, Narrow Gap Semiconductors 1995, edited by J.L. Reno, (IOP Publishing Ltd., 1995), 199.
- "RHEED studies of the surface reconstructions of InSb(001) during molecular beam epitaxy," M.B. Santos and W.K. Liu, Narrow Gap Semiconductors 1995, edited by J.L. Reno, (IOP Publishing Ltd., 1995), 194.
- "Surface reconstructions of InSb(001) during molecular beam epitaxy," W.K. Liu and M.B. Santos, Surface Science 319, 172 (1994).